PRAM (Owner = Samsung electronics Company)

[Principal inventor]

Phase change random access memory and methods of manufacturing and operating same

Dong-Seok Suh (100%)

US 8218359 B2 (2012.07.10); 미국등록

Vertical string phase change random access memory device

Dong-Seok Suh (100%)

US 8085583 B2 (2011.12.27); 미국등록

Non-volatile memory device and method of operating the same

Dong-Seok Suh (90%), Jun-ho Lee

US 8054672 B2 (2011.11.08); 미국등록

KR 10-1296288 (2013.08.07); 한국등록

Method of operating and structure of phase change random access memory (PRAM)

Dong-Seok Suh (65%), Yoon-ho Khang, Sang-mock Lee, Jin-seo Noh

US 7824953 B2 (2010.11.02); 미국등록

KR 10-0657944 (2006.12.08); 한국등록

Phase change random access memory devices and methods of operating the same

Dong-Seok Suh (50%), Yong-young Park, Tae-sang Park, Yoon-ho Khang

US 7705343 B2 (2010.04.27); 미국등록

KR 10-0682946 (2007.02.08); 한국등록

Phase-change random access memory and programming method

Dong-Seok Suh (50%), Eun-Hong Lee, Jin-Seo Noh

US 7626859 B2 (2009.12.01); 미국등록

Phase change memory devices and fabrication methods thereof

Dong-Seok Suh (50%), Yoon-ho Khang, Jin-Seo Noh, Vassill Leniachine, Mi-Jeong Song

US 7599216 B2 (2009.10.06); 미국등록

KR 10-0707182 (2007.04.06); 한국등록

Phase change memory devices and multi-bit operating methods for the same

Dong-Seok Suh (100%)

US 7558105 B2 (2009.07.07); 미국등록

KR 10-0738092 (2007.07.04); 한국등록

Storage nodes, phase change memory device and methods of operating and fabricating the same

Dong-Seok Suh (60%), Tae-Sang Park

US 7476892 B2 (2009.01.13); 미국등록

KR 10-0657972 (2006.12.08); 한국등록

Phase change memory devices and fabrication methods thereof

Dong-Seok Suh (50%), Yoon-ho Khang, Vassill Leniachine, Mi-Jeong Song, Sergey Antonov

US 7449360 B2 (2008.11.11); 미국등록

KR 10-0682937 (2007.02.08); 한국등록

[Co-inventor]

Method of measuring a resistance of a resistive memory device

Young-Kuk Kim, Mi-Lim Park, Hori Ihideki, Dong-Seok Suh (10%)

US 8144507 B2 (2012.03.27); 미국등록

KR 10-1571148 (2015.11.17); 한국등록

Phase change memory device having phase change material layer containing phase change nano particles

Yoon-ho Khang, Wil-Liam Jo, Dong-Seok Suh (20%)

US 8049202 B2 (2011.11.01); 미국등록

KR 10-0668334 (2007.01.08); 한국등록

Phase change material layers and phase change memory devices including the same

Youn-seon Kang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Yoon-ho Khang, Cheol-kyu Kim, Dong-Seok Suh (4.9%), Tae-yon Lee

US 8017929 B2 (2011.09.13); 미국등록

Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities

Jin-seo Noh, Yoon-ho Khang, Sang-mock Lee, Dong-Seok Suh (10%)

US 7956342 B2 (2011.06.07); 미국등록

KR 10-0682969 (2007.02.08); 한국등록

Doped phase change material and PRAM including the same

Yoon-ho Khang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Dong-Seok Suh (10%)

US 7763886 B2 (2010.07.27); 미국등록

Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device

Youn-seon Kang, Dong-Seok Suh (20%)

US 7737527 B2 (2010.06.15); 미국등록

Storage nodes, phase change memory devices, and methods of manufacturing the same

Yoon-ho Khang, Ki-joon Kim, Dong-Seok Suh (10%)

US 7696507 B2 (2010.04.13); 미국등록

KR 10-0858083 (2008.09.04); 한국등록

Phase change random access memory and method of operating the same

Sang-mock Lee, Yoon-ho Khang, Jin-seo Noh, Dong-Seok Suh (15%)

US 7642540 B2 (2010.01.05); 미국등록

KR 10-0695162 (2007.03.08); 한국등록

Phase-change RAM and method for fabricating the same

Sang-mock Lee, Jin-heong Yim, Yoon-ho Khang, Jin-seo Noh, Dong-Seok Suh (10%)

US 7541633 B2 (2009.06.02); 미국등록

KR 10-0668333 (2007.01.08); 한국등록

도핑된 상변화층을 구비하는 상변화 메모리 소자 및 그동작방법

(PRAM comprising doped phase change layer and method ofoperating the same)

노진서, 김기준, 강윤호, 신웅철, 서동석 (10%)

KR 10-0738115 (2007.07.04); 한국등록

RRAM (Owner = Samsung Electronics Company) - [Co-inventor]

Resistive memory devices including vertical transistor arrays and related fabrication methods

Deok-kee Kim, In Kyeong Yoo, Kyoung-won Na, Kwnag-Soo Seol, Dong-Seok Suh (10%)

US 8471232 B2 (2013.06.25); 미국등록

Non-volatile memory device with data storage layer

Deok-kee Kim, June-mo Koo, Ju-chul Park, Kyoung-won Na, Dong-Seok Suh (10%), Bum-Seok Seo, Yoon-dong Park

US 8319291 B2 (2012.11.27); 미국등록

KR 10-1493874 (2015.02.10); 한국등록

펄스전압을 인가하는 비휘발성 메모리 소자의 문턱 스위칭동작 방법

(Threshold switching operation method of nonvolitilememory device induced by pulse voltage)

김동철, 백인규, 서동석 (20%), 이명재, 안승언

KR 10-0818271 (2008.03.25); 한국등록

Memory device using multi-layer with a graded resistance change

Myoung-jae Lee, In-kyeong Yoo, Sun-ae Seo, Dong-Seok Suh (10%), David Seo, Sang-hun Jeon;

US 7521704 B2 (2009.04.21); 미국등록

KR 10-1051704 (2011.07.19); 한국등록

Image Sensor (Owner = Samsung electronics Company] - [Principal inventor]

Photodiode, image sensor and solar cell

Tae-Yon Lee (50%), Dong-Seok Suh (50%)

US 2011/0214736 A1 (2011.09.08); 미국공개

KR 10-1701920 (2017.01.25); 한국등록

Thermal image sensor with Chalcogenide material and method of fabricating the same

Tae-Yon Lee(40%), Dong-Seok Suh (40%), Yoon-dong Park (20%)

US 2012/0132804 A1 (2012.05.31); 미국공개

KR 10-2012-0059019 (2012.06.08); 한국공개

[Co-inventor]

Sensor and method using the same

Suk Pil Kim, Yoon Dong Park, Dong Seok Suh (20%), Young Gu Jin, Seung Hoon Lee

US 8937711 B2 (2015.01.20); 미국등록

KR 10-1652933 (2016.08.25); 한국등록

Sensor, method of operating the sensor, and system having the sensor

Tae Yon Lee, Young Gu Jin, Dong Ki Min, Dong Seok Suh (20%), Jae Pil Kim

US 9046358 B2 (2015.06.02); 미국등록

KR 10-1681198 (2016.11.24); 한국등록

Carbon Nanotube (Owner = Univ. of Texas at Dallas)

Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states

Dong-Seok Suh, Ray Henry Baughman, Anvar Abdulahadovic Zakhidov

US 8083909 B2 (2011.12.27); 미국등록

US 8080149 B2 (2011.12.20); 미국등록

US 8066855 B2 (2011.11.29); 미국등록

US 8021524 B2 (2011.09.20); 미국등록

US 7897030 B2 (2011.03.01); 미국등록

US 8101061 B2 (2012.01.24); 미국등록

[Co-inventor] 

Coiled and non-coiled twisted nanofiber yarn and polymer fiber torsional and tensile actuators

Na Li, Carter S. Haines, Marcio D. Lima, De Andrade Monica Jung, Shaoli Fang, Jiyoung Oh, Mikhail E. Kozlov, Fatma Goktepe, Ozer Goktepe, Dongseok Suh, Ray H. Baughman

WO2014022667 A3 (2014.09.18); PCT공개

평면형 신축성 전기저항 발열체 및 이의 제작 방법

(FLAT FLEXIBLE ELECTRIC RESISTANCE HEATING ELEMENT AND METHOD FABRICATING THEREOF)

서동석, 이유락, 이영희, 김정균

KR 10-1763658 (2017.07.26); 한국등록